| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2 pcs
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2 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Mounting Type | |
| Operating Temperature | |
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| Rds On (Max) @ Id, Vgs | |
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| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRFP32N50K is an N-Channel power MOSFET from Vishay Siliconix designed for high-voltage switching applications. It has a maximum drain-to-source voltage of 500V and a continuous drain current of 32A at Tc=25°C. The device features a low typical on-resistance of 0.135Ω at Vgs=10V and a maximum total gate charge of 190nC, enabling simple drive requirements and efficient high-frequency operation.
With a maximum pulsed drain current of 130A and single-pulse avalanche energy rating of 450mJ, the MOSFET provides robust performance in demanding switching environments. The maximum power dissipation is 460W at Tc=25°C, and the operating junction temperature range is -55°C to 150°C.
Typical applications include switch mode power supplies (SMPS), uninterruptible power supplies, high speed power switching, and hard switching or high frequency circuits. The device is supplied in a TO-247AC package with through-hole mounting, suitable for PCB designs requiring high power dissipation.
| Qty | Low | High |
|---|---|---|
| 500+ | $11.94 | $11.94 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
500V.
-55°C to 150°C (junction temperature).
TO-247-3 (TO-247AC) with through-hole mounting.
RoHS3 Compliant (unverified).
32A.
160mΩ maximum (135mΩ typical) at Id=32A, Vgs=10V.
190nC at Vgs=10V.