IRFP31N50LPBF IRFP31N50LPBF is an N-Channel power MOSFET from Vishay. It features a 500V drain-source voltage rating and 31A continuous drain current in a TO-247-3 through-hole package.
Mfr Part #:

IRFP31N50LPBF

Available from 3 distributors
Mfr Name: Vishay
Vishay
IRFP31N50LPBF is an N-Channel power MOSFET from Vishay. It features a 500V drain-source voltage rating and 31A continuous drain current in a TO-247-3 through-hole package.
✓ Total Stock: 9,630 pcs

IRFP31N50LPBF Available from 3 distributors

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2,630 pcs
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IRFP31N50LPBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IRFP31N50LPBF Description

Short technical summary and product information.

The IRFP31N50LPBF is an N-Channel enhancement-mode power MOSFET manufactured by Vishay. It is designed for high-voltage, high-current switching applications. The device is housed in a TO-247-3 through-hole package, suitable for power conversion and motor control circuits.

 

Key electrical specifications include a maximum drain-source voltage (Vdss) of 500V and a continuous drain current (Id) of 31A at case temperature (Tc). The MOSFET features a maximum gate threshold voltage (Vgs(th)) of 5V at 250µA drain current, and a maximum gate-source voltage (Vgs) of ±30V. On-state resistance (Rds(on)) is specified at 180mΩ maximum at Vgs=10V and Id=19A. The device has an input capacitance (Ciss) of 5000pF at Vds=25V and a total gate charge (Qg) of 210nC at Vgs=10V. Maximum power dissipation is 460W at case temperature. The operating junction temperature range is -55°C to +150°C.

 

This MOSFET is suitable for switch-mode power supplies, DC-DC converters, motor drives, and other power management applications requiring high voltage and current handling capability. The through-hole TO-247-3 package provides good thermal performance for power dissipation.

IRFP31N50LPBF Quick Information

Product Type: Power MOSFET
Canonical Name: IRFP31N50LPBF N-Channel Power MOSFET, 500V, 31A, TO-247-3
Subcategory: N-Channel Power MOSFET

IRFP31N50LPBF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IRFP31N50LPBF Features

  • N-Channel power MOSFET for high-voltage switching.
  • 500V maximum drain-source voltage rating.
  • 31A continuous drain current capability.
  • 180mΩ maximum on-resistance at 10V gate drive.
  • TO-247-3 through-hole package for thermal management.

IRFP31N50LPBF Applications

  • Switch-mode power supplies (SMPS).
  • DC-DC converters and power inverters.
  • Motor drives and motion control systems.
  • High-voltage power switching circuits.
  • Battery charging and power management.

IRFP31N50LPBF FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the IRFP31N50LPBF?

The maximum drain-source voltage (Vdss) is 500V.

What is the maximum continuous drain current of the IRFP31N50LPBF?

The maximum continuous drain current (Id) is 31A at case temperature (Tc).

What is the on-resistance of the IRFP31N50LPBF?

The maximum on-resistance (Rds(on)) is 180mΩ at Vgs=10V and Id=19A.

What is the operating temperature range of the IRFP31N50LPBF?

The operating junction temperature range is -55°C to +150°C.

What package does the IRFP31N50LPBF come in?

The IRFP31N50LPBF is available in a TO-247-3 through-hole package.

What is the gate threshold voltage of the IRFP31N50LPBF?

The maximum gate threshold voltage (Vgs(th)) is 5V at Id=250µA.

What is the maximum power dissipation of the IRFP31N50LPBF?

The maximum power dissipation is 460W at case temperature (Tc).

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