| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
75 pcs
|
75 pcs | On Request | 1 | On Request | On Request | 1123 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Form | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRFP3077PBF is an N-Channel power MOSFET from Infineon Technologies designed for high-efficiency power conversion. It features a drain-source breakdown voltage of 75V minimum and a continuous drain current of 120A (package limited) or 200A (silicon limited) at Tc=25°C. The static drain-to-source on-resistance is typically 2.8 mΩ with a maximum of 3.3 mΩ at Vgs=10V and Id=75A, making it one of the lowest RDS(on) devices in the TO-247 package.
This MOSFET is optimized for applications such as high-efficiency synchronous rectification in switched-mode power supplies (SMPS), uninterruptible power supplies (UPS), high-speed power switching, and hard-switched high-frequency circuits. It offers improved gate, avalanche, and dynamic dV/dt ruggedness, along with fully characterized capacitance and avalanche SOA. The total gate charge is 160 nC typical, enabling fast switching transitions.
The device is housed in a TO-247AC (TO-247-3) through-hole package with a junction-to-case thermal resistance of 0.44°C/W maximum. It operates over a junction temperature range of -55°C to 175°C and has a maximum power dissipation of 340W at Tc=25°C. The part is lead-free (PbF) and RoHS3 compliant (unverified). Standard packaging is in tubes of 25 pieces.
| Qty | Low | High |
|---|---|---|
| 1+ | $4.79 | $4.79 |
| 10+ | $4.30 | $4.30 |
| 100+ | $3.53 | $3.53 |
| 500+ | $3.00 | $3.00 |
| 1,000+ | $2.53 | $2.53 |
| 2,000+ | $2.41 | $2.41 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum drain-source breakdown voltage is 75V at Vgs=0V and Id=250µA.
The continuous drain current is 120A (package limited) at Tc=25°C, or 200A (silicon limited) at Tc=25°C. At Tc=100°C, the silicon-limited current is 140A.
The static drain-to-source on-resistance is typically 2.8 mΩ and maximum 3.3 mΩ at Vgs=10V and Id=75A.
The junction operating temperature range is -55°C to 175°C.
It is available in a TO-247AC (TO-247-3) through-hole package.
It is listed as RoHS3 compliant, but this status is unverified and should be confirmed with the manufacturer.
The total gate charge is typically 160 nC and maximum 220 nC at Vgs=10V, Vds=38V, Id=75A.