| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,400 pcs
|
2400 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Industrial Grade | |
| Input Capacitance | |
| Lead Spacing | |
| Medical Grade | |
| Military Grade | |
| Quantity | |
| Tape & Reel |
The Infineon IRFP3006PBF is an N-channel power MOSFET designed for high-efficiency applications. It features a maximum drain-to-source breakdown voltage of 60V and a typical static drain-to-source on-resistance of 2.1mΩ at 170A.
This MOSFET offers a continuous drain current of up to 270A (silicon limited) at 25°C case temperature. It is characterized by its improved gate, avalanche, and dynamic dV/dt ruggedness, along with enhanced body diode dV/dt and dI/dt capability.
The device is housed in a TO-247AC package, suitable for through-hole mounting. Key electrical parameters include a gate threshold voltage between 2V and 4V, and a total gate charge of 200nC typical. The operating junction and storage temperature range is -55°C to +175°C.
Applications include high-efficiency synchronous rectification in SMPS, uninterruptible power supplies, and high-speed power switching circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.71 | $0.71 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source breakdown voltage is 60V.
The typical static drain-to-source on-resistance is 2.1mΩ at 170A.
The continuous drain current is 270A (silicon limited) at 25°C case temperature.
The maximum power dissipation is 375W at 25°C case temperature.
The operating junction and storage temperature range is -55°C to +175°C.
The IRFP3006PBF is supplied in a TO-247AC package.
The standard pack quantity is 25 units in a tube.