Mfr Part #:

IRFP2907PBF

Mfr Name: Infineon

The Infineon IRFP2907PBF is an N-Channel HEXFET Power MOSFET designed for efficiency and reliability. It features a 75V drain-source breakdown voltage and a low on-resistance.

✓ Total Stock: 8,713 pcs

$ Price Range: $0.71

IRFP2907PBF Available from 3 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Fe Components ✓ Non-Authorised Inventory information	6,093 pcs On Request	6093 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Optech Co.,Limited ✓ Non-Authorised Inventory information	2,220 pcs On Request	2220 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Smaxon Electronics ✓ Non-Authorised Inventory information	400 pcs On Request	400 pcs	On Request	1	On Request	On Request	21+	On Request	On Request

IRFP2907PBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	Infineon
Input Capacitance	13000 pF
Mounting Type	Through Hole
Power Dissipation	470 W
Tape & Reel	No

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IRFP2907PBF Description

Short technical summary and product information.

The Infineon IRFP2907PBF is a high-performance N-Channel HEXFET Power MOSFET. It utilizes advanced processing technology to achieve extremely low on-resistance per silicon area, making it an efficient and reliable component.

Key electrical specifications include a drain-to-source breakdown voltage of 75V and a continuous drain current of up to 209A at 25°C. The static drain-to-source on-resistance is a low 4.5mΩ at a gate-to-source voltage of 10V. The device operates with a gate threshold voltage between 2.0V and 4.0V.

This MOSFET features a 175°C junction operating temperature and fast switching speeds. It is housed in a TO-247AC package, suitable for through-hole mounting. The design also includes an improved repetitive avalanche rating and dynamic dv/dt rating.

Typical applications include telecom applications requiring soft start. Its robust design makes it suitable for a wide variety of power management tasks.

IRFP2907PBF Quick Information

Product Type: MOSFET

Canonical Name: Infineon IRFP2907PBF HEXFET Power MOSFET

Subcategory: N-Channel

IRFP2907PBF Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

Lead Free: Lead-Free

IRFP2907PBF Estimated Pricing

Qty	Low	High
1+	$0.71	$0.71

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRFP2907PBF Features

Ultra low on-resistance per silicon area.
175°C junction operating temperature.
Fast switching speed.
Repetitive avalanche rating.
TO-247AC package for through-hole mounting.

IRFP2907PBF Applications

Suitable for telecom applications.
Designed for soft start functionality.
Efficient power management solutions.
Reliable in various power applications.

IRFP2907PBF FAQs

7 frequently asked questions generated from this part’s specifications.

What is the continuous drain current at 25°C?

The continuous drain current at 25°C with VGS at 10V is 209A.

What is the maximum power dissipation?

The maximum power dissipation at TC = 25°C is 470W.

What is the gate-to-source voltage rating?

The gate-to-source voltage rating is ±20V.

What is the drain-to-source breakdown voltage?

The drain-to-source breakdown voltage is a minimum of 75V.

What is the static drain-to-source on-resistance?

The static drain-to-source on-resistance is a maximum of 4.5mΩ at VGS = 10V and ID = 125A.

What is the operating junction temperature range?

The operating junction temperature range is -55°C to +175°C.

What is the package type?

The package type is TO-247AC.