| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
308 pcs
|
308 pcs | On Request | 1 | On Request | On Request | 1210+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRFP26N60LPBF is an N-Channel enhancement-mode MOSFET manufactured by Vishay Dale. It features a maximum drain-source voltage (Vdss) of 600V and a continuous drain current (Id) of 26A at case temperature (Tc). The device is built using MOSFET (Metal Oxide) technology and requires a gate drive voltage of 10V for optimal Rds(on) performance.
Key electrical characteristics include a maximum on-resistance (Rds(on)) of 250mOhm at Id=16A and Vgs=10V, a maximum gate charge (Qg) of 180nC at Vgs=10V, and an input capacitance (Ciss) of 5020pF at Vds=25V. The maximum power dissipation is 470W at Tc, and the operating junction temperature range is -55°C to 150°C.
The device is supplied in a TO-247-3 through-hole package (supplier device package TO-247AC), suitable for high-power switching applications. The maximum gate-source voltage (Vgs) is ±30V, and the threshold voltage (Vgs(th)) is 5V at Id=250µA.
The maximum drain-source voltage (Vdss) is 600V.
The maximum continuous drain current (Id) is 26A at case temperature (Tc).
It uses a TO-247-3 through-hole package (supplier device package TO-247AC).
The operating junction temperature range is -55°C to 150°C.
The part is listed as RoHS3 Compliant, but this is unverified.
The maximum on-resistance (Rds(on)) is 250mOhm at Id=16A and Vgs=10V.
The maximum gate charge (Qg) is 180nC at Vgs=10V.