| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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14 pcs
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14 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRFP26N60L is an N-Channel Power MOSFET manufactured by Vishay, designed for applications such as zero voltage switching (SMPS), telecom and server power supplies, uninterruptible power supplies, and motor control. It offers a high drain-source voltage rating of 600V and a low on-resistance of 0.21Ω when the gate-source voltage is 10V. The MOSFET has a maximum continuous drain current of 26A at 25°C case temperature and a maximum power dissipation of 470W at 25°C.
Key electrical characteristics include a gate charge (Qg) of 180nC (max), gate-source charge (Qgs) of 61nC, and gate-drain charge (Qgd) of 85nC. The device also features a superfast body diode, enhanced dV/dt capabilities, and a higher gate voltage threshold for improved ruggedness and noise immunity. It operates within a junction and storage temperature range of -55°C to +150°C.
The IRFP26N60L is supplied in a TO-247AC package and is designed for through-hole mounting. This MOSFET is suitable for demanding power applications requiring high efficiency and reliability.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.71 | $0.71 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 600V.
The typical on-resistance is 0.21Ω at Vgs=10V.
The maximum power dissipation is 470W at a case temperature of 25°C.
The operating junction and storage temperature range is -55°C to +150°C.
The IRFP26N60L is supplied in a TO-247AC package.
Key applications include zero voltage switching (SMPS), telecom and server power supplies, uninterruptible power supplies, and motor control.