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19 pcs
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19 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRFP264 is a high-voltage N-Channel power MOSFET designed for efficient switching and amplification in power electronics. Manufactured by Infineon Technologies, this device offers a drain-source breakdown voltage of 250V and a continuous current rating of 38A, making it suitable for medium-power applications.
The MOSFET features a maximum RDS(on) of 75mΩ at a gate threshold voltage of 4V, ensuring low conduction losses. It has a total input capacitance of 5.4nF, with a rise time of 99ns and a fall time of 92ns, enabling moderate-speed switching performance.
Packaged in a standard TO-247-3 through-hole housing, the IRFP264 supports a maximum power dissipation of 280W and operates over a junction temperature range of -55°C to +150°C. The package allows for efficient thermal management and easy mounting on heatsinks.
This MOSFET is commonly used in switch-mode power supplies, motor control circuits, and DC-DC converters where high efficiency and reliability are required.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 250V.
The maximum continuous drain current is 38A.
The maximum RDS(on) is 75mΩ.
The IRFP264 is available in a TO-247-3 through-hole package.
The operating junction temperature range is -55°C to +150°C.
The gate threshold voltage is 4V.