| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
15 pcs
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15 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| SVHC Present |
The Vishay Dale IRFP250NPBF is an N-channel Power MOSFET from the Fifth Generation HEXFET family. It utilizes advanced processing techniques to achieve low on-resistance per silicon area, combined with fast switching speeds and a ruggedized design.
Key electrical specifications include a Drain-to-Source Breakdown Voltage (V(BR)DSS) of 200V and a maximum Static Drain-to-Source On-Resistance (RDS(on)) of 0.075Ω at a gate-source voltage of 10V and a drain current of 18A. The continuous drain current (ID) is rated at 30A at 25°C case temperature and 21A at 100°C case temperature. It also features a maximum power dissipation (PD) of 214W at 25°C case temperature.
This MOSFET is designed for a wide variety of applications requiring efficient and reliable performance. The operating junction and storage temperature range is -55°C to +175°C. The device is housed in a TO-247AC package, which is suitable for commercial-industrial applications with higher power levels.
Additional features include a gate-to-source voltage range of ±20V, a single pulse avalanche energy (EAS) of 315mJ, and a peak diode recovery dv/dt of 8.6V/ns. The junction-to-case thermal resistance (RθJC) is 0.7°C/W.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.22 | $3.22 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum continuous drain current is 30A at 25°C case temperature.
The Drain-to-Source Breakdown Voltage is 200V.
The maximum Static Drain-to-Source On-Resistance is 0.075Ω.
The operating junction and storage temperature range is -55°C to +175°C.
The IRFP250NPBF is supplied in a TO-247AC package.
The RoHS Status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.