| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
150 pcs
|
150 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRFP250 is an N-Channel power MOSFET manufactured by STMicroelectronics. It features a drain-source voltage (Vdss) of 200V and a continuous drain current (Id) of 33A. The device has a maximum on-resistance of 85 mOhm at 16A and 10V gate drive. The gate threshold voltage is 4V maximum at 250µA drain current. Total gate charge is 158 nC at 10V, and input capacitance is 2850 pF at 25V drain-source voltage. The maximum power dissipation is 180W, and the operating junction temperature is up to 150°C. This MOSFET is designed for through-hole mounting in a TO-247-3 package. Typical applications include switching power supplies, motor control, and DC-DC converters. The device is RoHS3 compliant and has an MSL of 1 (unlimited).
| Qty | Low | High |
|---|---|---|
| 600+ | $1.31 | $1.31 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
200V.
33A.
85 mOhm at 16A and 10V gate drive.
4V maximum at 250µA drain current.
TO-247-3 through-hole.
150°C.
Yes, RoHS3 compliant.