IRFP22N50A IRFP22N50A is an N-Channel power MOSFET with 500V drain-source voltage and 22A continuous drain current. It features a low 230mΩ on-resistance and comes in a TO-247-3 through-hole package.
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IRFP22N50A

Available from 1 distributors
Mfr Name: Vishay
Vishay
IRFP22N50A is an N-Channel power MOSFET with 500V drain-source voltage and 22A continuous drain current. It features a low 230mΩ on-resistance and comes in a TO-247-3 through-hole package.
✓ Total Stock: 8,777 pcs
$ Price Range: $8.61

IRFP22N50A Available from 1 distributor

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IRFP22N50A Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IRFP22N50A Description

Short technical summary and product information.

The IRFP22N50A is an N-Channel power MOSFET designed for high-voltage power switching applications. It has a drain-source voltage rating of 500V and a continuous drain current of 22A at 25°C case temperature. The device features a maximum on-resistance of 230mΩ at a gate-source voltage of 10V and a drain current of 13A.

 

This MOSFET offers a maximum gate charge of 120nC at 10V gate-source voltage, with typical gate-source charge of 32nC and gate-drain charge of 52nC. The maximum gate threshold voltage is 4V at 250µA drain current. Input capacitance is rated at 3450pF maximum at 25V drain-source voltage. The device can handle pulsed drain currents up to 88A and has a single pulse avalanche energy rating of 1180mJ.

 

With a maximum power dissipation of 277W at 25°C case temperature and a junction-to-case thermal resistance of 0.45°C/W, the IRFP22N50A is suitable for demanding power applications. The operating junction temperature range is -55°C to 150°C. The gate-source voltage rating is ±30V, and the recommended drive voltage for achieving minimum on-resistance is 10V.

 

The IRFP22N50A is housed in a TO-247-3 package with a TO-247AC supplier device package, designed for through-hole mounting. This package configuration provides good thermal performance for high-power applications. The device is suitable for switch mode power supplies, uninterruptible power supplies, and high-speed power switching circuits.

IRFP22N50A Quick Information

Product Type: Power MOSFET
Canonical Name: IRFP22N50A N-Channel Power MOSFET
Subcategory: Single MOSFET

IRFP22N50A Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IRFP22N50A Estimated Pricing

Qty Low High
500+ $8.61 $8.61

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRFP22N50A Features

  • 500V drain-source voltage rating.
  • 22A continuous drain current capability.
  • 230mΩ maximum on-resistance at 10V gate drive.
  • TO-247-3 through-hole package for thermal performance.
  • 1180mJ single pulse avalanche energy rating.

IRFP22N50A Applications

  • Used in switch mode power supplies.
  • Suitable for uninterruptible power supplies.
  • Ideal for high-speed power switching circuits.
  • Applicable in full bridge converter topologies.
  • Used in power factor correction boost circuits.

IRFP22N50A FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the IRFP22N50A?

The drain-source voltage rating is 500V.

What is the continuous drain current rating?

The continuous drain current is 22A at Tc=25°C.

What is the maximum on-resistance?

The maximum on-resistance is 230mΩ at Id=13A and Vgs=10V.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

What package is the IRFP22N50A available in?

The device is available in a TO-247-3 package with TO-247AC supplier device package, through-hole mounting.

What is the maximum power dissipation?

The maximum power dissipation is 277W at Tc=25°C.

What is the gate charge of this MOSFET?

The maximum total gate charge is 120nC at Vgs=10V, with typical gate-source charge of 32nC and gate-drain charge of 52nC.

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