IRFP150NPBF

The Vishay Siliconix IRFP150NPBF is a Fifth Generation HEXFET Power MOSFET designed for high efficiency and reliability. It utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area, combined with fast switching speeds.

Key electrical specifications include a Drain-to-Source Breakdown Voltage of 100V and a maximum Static Drain-to-Source On-Resistance of 0.036 Ohms at a gate-source voltage of 10V and a drain current of 23A. The continuous drain current is rated at 42A at 25°C and 30A at 100°C. The device supports a gate-to-source voltage range of ±20V and has a maximum power dissipation of 160W at 25°C.

This MOSFET operates within a junction temperature range of -55°C to +175°C. It features a TO-247AC package, which is suitable for commercial-industrial applications requiring higher power levels. The TO-247AC package offers an isolated mounting hole, an improvement over earlier TO-218 packages.

Additional features include a single pulse avalanche energy of 420 mJ and an avalanche current of 22A. The device is fully avalanche rated and designed for fast switching, making it suitable for a wide variety of applications.