IRFP150N N-Channel power MOSFET with 100V drain-source breakdown voltage and 42A continuous drain current. Features 36mΩ on-resistance and TO-247AC through-hole package.
Mfr Part #:

IRFP150N

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel power MOSFET with 100V drain-source breakdown voltage and 42A continuous drain current. Features 36mΩ on-resistance and TO-247AC through-hole package.
✓ Total Stock: 3 pcs
$ Price Range: $3.18

IRFP150N Available from 1 distributor

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✓ Non-Authorised
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IRFP150N Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IRFP150N Description

Short technical summary and product information.

The IRFP150N is an N-Channel enhancement mode power MOSFET from Infineon Technologies' HEXFET family. It utilizes advanced process technology to achieve a low on-resistance of 36mΩ at Vgs=10V and Id=23A, combined with fast switching performance. The device is rated for a drain-source voltage of 100V and can handle continuous drain currents up to 42A at 25°C case temperature.

 

This MOSFET is fully avalanche rated with a single pulse avalanche energy of 420mJ and an avalanche current capability of 22A. It features a maximum operating junction temperature of 175°C and a power dissipation of 160W at 25°C case temperature. The gate threshold voltage ranges from 2.0V to 4.0V at Id=250µA, and the total gate charge is 110nC at Vgs=10V.

 

The IRFP150N is housed in the industry-standard TO-247AC package, which offers an isolated mounting hole and superior thermal performance compared to TO-218. It is a through-hole mount device suitable for commercial and industrial applications requiring higher power levels. The part is lead-free (PbF) and RoHS3 compliant.

IRFP150N Quick Information

Product Type: Power MOSFET
Canonical Name: IRFP150N N-Channel Power MOSFET
Subcategory: N-Channel Power MOSFET

IRFP150N Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: No

IRFP150N Estimated Pricing

Qty Low High
25+ $3.18 $3.18

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRFP150N Features

  • N-Channel MOSFET with 100V drain-source voltage.
  • 42A continuous drain current at 25°C case temperature.
  • Low 36mΩ on-resistance at 10V gate drive.
  • Fully avalanche rated with 420mJ single pulse energy.
  • TO-247AC through-hole package for high power.

IRFP150N Applications

  • Used in high-power switching power supplies.
  • Suitable for DC-DC converters and motor drives.
  • Ideal for industrial power management systems.
  • Applied in automotive and commercial power circuits.

IRFP150N FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the IRFP150N?

The drain-source breakdown voltage is 100V minimum.

What is the maximum continuous drain current?

42A at Tc=25°C and 30A at Tc=100°C.

What is the on-resistance of the IRFP150N?

Maximum 36mΩ at Id=23A and Vgs=10V.

What package is the IRFP150N available in?

TO-247-3 (TO-247AC) through-hole package.

What is the operating temperature range?

-55°C to 175°C junction temperature.

Is the IRFP150N RoHS compliant?

The datasheet indicates lead-free (PbF) and RoHS3 compliant status, though this is unverified from the manufacturer.

What is the gate threshold voltage?

2.0V to 4.0V at Id=250µA.

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