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3,600 pcs
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3600 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request |
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The Vishay Dale IRFP150MPBF is an N-Channel Power MOSFET utilizing advanced IR MOSFET technology for low on-resistance per silicon area. This device offers a breakdown voltage of 100V and a continuous drain current of 42A at 25°C case temperature.
Key electrical characteristics include a maximum static drain-to-source on-resistance of 0.036Ω at 10V gate-to-source voltage and 23A drain current. The gate threshold voltage ranges from 2.0V to 4.0V. It also features a forward transconductance of 14S and a total gate charge of 110nC.
With an operating temperature range of -55°C to +175°C, the IRFP150MPBF is suitable for demanding applications. The TO-247AD package is preferred for industrial applications requiring higher power levels than TO-220 devices, offering an isolated mounting hole.
This MOSFET is fully avalanche rated and designed for fast switching speeds, making it a reliable choice for various power conversion and control applications.
The maximum continuous drain current is 42A at 25°C case temperature.
The drain-to-source breakdown voltage is 100V.
The maximum static drain-to-source on-resistance is 0.036Ω.
The operating junction and storage temperature range is -55°C to +175°C.
The IRFP150MPBF is supplied in the TO-247AD package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.