| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,170 pcs
|
1170 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
326 pcs
|
326 pcs | On Request | 1 | On Request | On Request | 20+ | On Request | On Request |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRFP150MPBF is an N-Channel enhancement-mode MOSFET manufactured by Infineon Technologies using advanced process technology. It is designed for high-power switching applications requiring efficient performance and ruggedness.
Key electrical specifications include a drain-to-source breakdown voltage of 100V, a continuous drain current of 42A at 25°C, and a maximum on-resistance of 36mOhm at Vgs=10V and Id=23A. The device can handle pulsed drain currents up to 140A and single-pulse avalanche energy up to 420mJ. The gate threshold voltage is 4V maximum at Id=250µA, and the total gate charge is 110nC at Vgs=10V.
The MOSFET is housed in a TO-247-3 (TO-247AC) through-hole package, suitable for commercial and industrial power levels where higher dissipation is required. The operating junction temperature range is -55°C to 175°C, and maximum power dissipation is 160W at case temperature 25°C.
The drain-source breakdown voltage is 100V.
The continuous drain current is 42A at 25°C case temperature.
The maximum on-resistance is 36mOhm at Vgs=10V and Id=23A.
It is available in a TO-247-3 (TO-247AC) through-hole package.
The operating junction temperature range is -55°C to 175°C.
The part is marked as RoHS3 compliant, but this is unverified.