| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,568 pcs
|
2568 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,250 pcs
|
2250 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRFP150A is an N-Channel enhancement-mode MOSFET manufactured by ON Semiconductor. It is designed for high-efficiency power conversion applications, offering a drain-to-source voltage of 100V and a continuous drain current of 43A at case temperature. The device features a maximum on-resistance of 40mOhm at a gate drive of 10V, ensuring low conduction losses.
This MOSFET utilizes advanced MOSFET technology to achieve fast switching performance, with a typical gate charge of 97nC and input capacitance of 2270pF. The device is capable of handling up to 193W of power dissipation at case temperature. The junction temperature range spans from -55°C to 175°C, suitable for demanding thermal environments.
The IRFP150A is supplied in a through-hole TO-3PN package (also known as TO-3P-3), which offers excellent thermal dissipation for high-power applications. The recommended gate drive voltage is 10V for optimal on-resistance, and the maximum gate-source voltage is ±20V. This part is RoHS3 compliant and has a moisture sensitivity level of 1 (unlimited).
| Qty | Low | High |
|---|---|---|
| 450+ | $1.36 | $1.36 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 100V.
It is available in a through-hole TO-3PN (TO-3P-3) package.
The junction temperature range is -55°C to 175°C.
Yes, it is RoHS3 compliant.
The maximum continuous drain current is 43A at case temperature.
The maximum on-resistance is 40mOhm at a gate voltage of 10V and drain current of 21.5A.
The recommended gate drive voltage is 10V for maximum on-resistance.