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4 pcs
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4 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRFP150 is a single N-channel HEXFET power MOSFET manufactured by Samsung Electronics. It is designed for commercial-industrial applications and comes in a TO-247-3 package.
Key electrical specifications include a breakdown voltage of 100V, a continuous current rating of 41A, and a maximum on-resistance (RDS(on)) of 55mΩ. The threshold voltage is 2V. Switching characteristics are defined by a rise time of 120ns and a fall time of 81ns.
Thermal performance is supported by a maximum power dissipation of 180W and a general power dissipation rating of 230W. The operating temperature range spans from -55°C to 150°C.
This MOSFET is suitable for various power switching applications where robust performance and thermal management are critical. Its TO-247-3 package is preferred for higher power levels.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.45 | $0.45 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The breakdown voltage of the IRFP150 is 100V.
The IRFP150 has a maximum continuous current rating of 41A.
The maximum on-resistance (RDS(on)) for the IRFP150 is 55mΩ.
The IRFP150 operates within a temperature range of -55°C to 150°C.
The IRFP150 is supplied in a TO-247-3 package.