| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
16 pcs
|
16 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Drain to Source Voltage (Vdss) | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Vgs(th) (Max) @ Id |
The Infineon Technologies IRFP150NPBF is an N-Channel MOSFET designed for power management applications. It features a maximum drain-source voltage of 100V and a continuous drain current of 42A at 25°C.
This HEXFET® series MOSFET has a low on-resistance of 36mOhm at 23A and 10V, with a gate charge of 110 nC at 10V. The maximum power dissipation is rated at 160W (Tc), and it operates across a wide temperature range of -55°C to 175°C.
The component is suitable for through-hole mounting and comes in a TO-247AC package. Its specifications make it a robust choice for various power switching and amplification circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 100V.
The continuous drain current (Id) is 42A at 25°C case temperature.
The maximum on-resistance (Rds(on)) is 36mOhm at a gate-source voltage of 10V and a drain current of 23A.
The operating junction temperature range is -55°C to 175°C.
The IRFP150 is available in a TO-247AC through-hole package.
The maximum gate charge (Qg) is 110nC at a gate-source voltage of 10V.
The maximum power dissipation is 160W at the case temperature.