| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
12,495 pcs
|
12495 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRFP140PBF is an N-Channel Power MOSFET designed for high-efficiency power switching applications. It offers a drain-source voltage rating of 100V and a continuous drain current of 31A at 25°C case temperature. The device features a maximum on-resistance of 77mΩ at Vgs=10V and Id=19A, ensuring low conduction losses. Gate charge is 72nC and input capacitance is 1700pF, enabling moderate switching speeds. The MOSFET is rated for a maximum power dissipation of 180W and can operate over a junction temperature range of -55°C to 175°C. It also supports pulsed drain current up to 120A and single pulse avalanche energy of 100mJ, indicating ruggedness for inductive loads. The device is packaged in a through-hole TO-247-3 package with an isolated mounting hole for easy heatsink attachment. This package is suitable for commercial and industrial applications requiring higher power levels.
| Qty | Low | High |
|---|---|---|
| 1+ | $5.42 | $5.42 |
| 25+ | $3.12 | $3.12 |
| 50+ | $2.82 | $2.82 |
| 100+ | $2.57 | $2.57 |
| 500+ | $2.12 | $2.12 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
100 V.
TO-247-3 (through-hole).
-55°C to 175°C (junction).
RoHS3 compliant (unverified).
77 mΩ maximum at Vgs=10V, Id=19A.
72 nC maximum at Vgs=10V.
31 A at Tc=25°C.