IRFP064NPBF N-Channel MOSFET, 55V drain-source voltage, 110A continuous drain current, 8mΩ on-resistance, in TO-247AC through-hole package.
Mfr Part #:

IRFP064NPBF

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel MOSFET, 55V drain-source voltage, 110A continuous drain current, 8mΩ on-resistance, in TO-247AC through-hole package.
✓ Total Stock: 2,500 pcs
$ Price Range: $1.19 - $3.28

IRFP064NPBF Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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2,500 pcs
2500 pcs On Request 1 On Request On Request On Request On Request On Request

IRFP064NPBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IRFP064NPBF Description

Short technical summary and product information.

The IRFP064NPBF is an N-Channel MOSFET from Infineon Technologies, part of the HEXFET family of power MOSFETs. It features a maximum drain-source voltage (Vds) of 55V and a continuous drain current (Id) of 110A at 25°C case temperature, with a maximum on-resistance of 8 mΩ at Vgs=10V. The device offers fast switching performance with typical turn-on delay of 14 ns and rise time of 100 ns, making it suitable for high-efficiency power conversion circuits.

 

This MOSFET is fully avalanche rated with a single pulse avalanche energy of 480 mJ and an avalanche current capability of 59A. It has a total gate charge of 170 nC and input capacitance of 4000 pF, which are important parameters for gate drive design. The device can operate over a junction temperature range of -55°C to 175°C, with a maximum power dissipation of 200W at 25°C case temperature.

 

The IRFP064NPBF is housed in a TO-247-3 (TO-247AC) through-hole package, which is preferred for higher power levels in commercial and industrial applications. It is lead-free and listed as RoHS compliant, though the compliance status is unverified. The robust design includes dynamic dv/dt rating and repetitive avalanche energy capability, enhancing reliability in demanding environments.

IRFP064NPBF Quick Information

Product Type: MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor)
Series: HEXFET
Canonical Name: IRFP064NPBF MOSFET
Subcategory: Single N-Channel MOSFET

IRFP064NPBF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead-Free

IRFP064NPBF Estimated Pricing

Qty Low High
1+ $3.28 $3.28
25+ $1.82 $1.82
50+ $1.63 $1.63
100+ $1.47 $1.47
500+ $1.19 $1.19

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRFP064NPBF Features

  • N-Channel MOSFET with 55V drain-source voltage.
  • Continuous drain current of 110A at 25°C.
  • Ultra low on-resistance of 8 mΩ.
  • Rated for operating temperature up to 175°C.
  • Lead-free and RoHS compliant (unverified).

IRFP064NPBF Applications

  • Used in high-power switching power supplies.
  • Suitable for DC-DC converters and motor drives.
  • Ideal for automotive and industrial power systems.
  • Applied in battery management and power inverters.

IRFP064NPBF FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the IRFP064NPBF?

55V maximum.

What package is the IRFP064NPBF available in?

TO-247-3 (also known as TO-247AC) through-hole package.

What is the operating junction temperature range?

-55°C to 175°C.

Is the IRFP064NPBF RoHS compliant?

It is listed as RoHS3 compliant, but the compliance status is unverified and marked as low confidence.

What is the maximum on-resistance?

8 mΩ maximum at Vgs = 10V and Id = 59A.

What is the total gate charge?

170 nC at Vgs = 10V.

What is the single pulse avalanche energy rating?

480 mJ.

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