| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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55,250 pcs
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55250 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRFP064N from Vishay Dale is a HEXFET Power MOSFET utilizing advanced processing technology for extremely low on-resistance per silicon area. This device offers a drain-source breakdown voltage (Vds) of 55V and a continuous drain current (Id) of 110A at 25°C.
Key electrical characteristics include a low static drain-to-source on-resistance (Rds(on)) of 0.008 Ohms at a gate-source voltage (Vgs) of 10V and a drain current of 59A. The MOSFET also features a gate threshold voltage (Vgs(th)) between 2.0V and 4.0V. Its fast switching speeds are supported by typical turn-on delay time of 14ns and turn-off delay time of 43ns.
With a power dissipation (Pd) rating of 200W at 25°C and an operating junction temperature range of -55°C to +175°C, the IRFP064N is suitable for demanding industrial applications. The device is housed in a TO-247-3 package, which is a through-hole mounting type preferred for higher power levels.
This MOSFET is designed for a wide variety of applications including DC motors, inverters, SMPS, lighting, and battery-powered systems. Its ruggedized design and fully avalanche rated capabilities ensure reliability in various operating conditions.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.71 | $0.71 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage (Vds) is 55V.
The continuous drain current (Id) is 110A at 25°C with a Vgs of 10V.
The static drain-to-source on-resistance (Rds(on)) is a maximum of 0.008 Ohms when Vgs is 10V and Id is 59A.
The operating junction and storage temperature range is -55°C to +175°C.
The IRFP064N is supplied in a TO-247-3 package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.