| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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4,220 pcs
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4220 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Rds On (Max) @ Id, Vgs | |
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| Vgs(th) (Max) @ Id |
The IRFP054NPBF is an N-Channel power MOSFET from Infineon Technologies, part of the fifth-generation HEXFET family. It is designed for high-power switching applications requiring low on-resistance and fast switching performance. The device features a drain-to-source breakdown voltage of 55V and a continuous drain current rating of 81A at 25°C case temperature, with a maximum on-resistance of 12mOhm at VGS = 10V and ID = 43A.
The MOSFET is fully avalanche rated with a single pulse avalanche energy of 360mJ and an avalanche current of 43A, making it suitable for rugged industrial environments. It offers a maximum power dissipation of 170W at 25°C case temperature and an operating junction temperature range of -55°C to 175°C. The device also features a peak diode recovery dv/dt rating of 5.0 V/ns, supporting reliable operation in bridge and half-bridge topologies.
The IRFP054NPBF is housed in a TO-247AC through-hole package, which is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The package includes an isolated mounting hole and supports a mounting torque of 10 lbf·in (1.1 N·m) with a 6-32 or M3 screw. The device is lead-free and available in tube packaging with a standard pack quantity of 25 units.
Typical applications include switch-mode power supplies, DC-DC converters, motor control circuits, and other power switching circuits where high efficiency and reliability are required. The device's low gate charge (130nC) and fast switching times (11ns turn-on delay, 66ns rise time) enable efficient high-frequency operation.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.70 | $3.70 |
| 25+ | $2.07 | $2.07 |
| 50+ | $1.86 | $1.86 |
| 100+ | $1.68 | $1.68 |
| 500+ | $1.37 | $1.37 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The operating junction temperature range is -55°C to 175°C, with a storage temperature range of -55°C to +175°C.
The IRFP054NPBF is available in a TO-247-3 package (supplier device package TO-247AC) with through-hole mounting.
The IRFP054NPBF is marked as RoHS3 compliant, though this status is unverified. The datasheet confirms the device is lead-free.
The drain-to-source breakdown voltage is 55V minimum.
The maximum continuous drain current is 81A at TC = 25°C with VGS = 10V, and 57A at TC = 100°C.
The maximum on-resistance is 12mOhm at VGS = 10V and ID = 43A.
The maximum power dissipation is 170W at TC = 25°C, with a linear derating factor of 1.1 W/°C.