| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,000 pcs
|
4000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRFP044NPBF is an N-Channel enhancement-mode power MOSFET manufactured by Infineon Technologies, part of the HEXFET family. It features a drain-to-source voltage (Vdss) of 55 V and a continuous drain current (Id) of 53 A at 25°C case temperature.
With an on-resistance (Rds(on)) of 20 mOhm maximum at 29 A and 10 V gate drive, this device is designed for high-efficiency power switching applications. The gate threshold voltage is 4 V maximum at 250 µA drain current. A maximum gate charge of 61 nC at 10 V and input capacitance of 1500 pF at 25 V enable fast switching performance.
The MOSFET is housed in a TO-247-3 package (supplier device package TO-247AC) with through-hole mounting, suitable for high-power circuit boards. The operating junction temperature range is -55°C to 175°C, with maximum power dissipation of 120 W at case temperature.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.43 | $2.43 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
55 V
53 A at 25°C case temperature
20 mOhm maximum at 29A, 10V
-55°C to 175°C (junction)
TO-247-3 (TO-247AC) through-hole
61 nC maximum at 10V
1500 pF maximum at 25V