| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
100 pcs
|
100 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This is an N-Channel power MOSFET using metal-oxide semiconductor technology. It is rated for a maximum drain-source voltage of 200V and a continuous drain current of 1A (at Tc). The on-resistance is typically 1.5Ω at 10V gate drive. The device features a maximum gate threshold voltage of 4V at 250µA drain current. It can handle up to 3.1W power dissipation at ambient temperature. The operating temperature range is -55°C to 150°C junction temperature. The gate charge is 9.3nC at 10V, and input capacitance is 225pF at 25V drain-source. The MOSFET is offered in a through-hole TO-226-3/TO-92-3 Long Body package, with a supplier device package of TO-92L. Suitable for switching and amplification applications in low-power circuits.
| Qty | Low | High |
|---|---|---|
| 387+ | $0.78 | $0.78 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 200V.
Through-hole TO-226-3, TO-92-3 Long Body package, with supplier device package TO-92L.
-55°C to 150°C junction temperature.
RoHS3 compliant, but this is unverified and low confidence.
Maximum 4V at 250µA drain current.
Maximum 1.5Ω at 500mA and 10V gate drive.
3.1W at ambient temperature.