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50 pcs
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50 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon Technologies IRFNG50 is a high-reliability N-Channel HEXFET Power MOSFET. It is designed using efficient geometry for low on-state resistance and high transconductance, offering advantages like voltage control and fast switching.
Key electrical specifications include a Drain-to-Source Breakdown Voltage (BVDSS) of 1000V and a Continuous Drain Current (ID) of 5.5A at 25°C case temperature, reducing to 3.5A at 100°C. The static drain-to-source on-state resistance (RDS(on)) is a maximum of 2.0 Ohms at VGS = 10V and ID = 3.5A. The device also features a Gate Threshold Voltage (VGS(th)) typically around 3.0V and a maximum power dissipation (PD) of 150W at 25°C.
This MOSFET is suitable for applications such as switching power supplies, motor controls, inverters, and choppers. Its HEXFET technology and surface mountable SMD-1 package contribute to improved thermal efficiency and ease of integration.
The operating junction temperature ranges from -55°C to 150°C, with a storage temperature range also from -55°C to 150°C. The device is designed for high reliability, making it suitable for demanding applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.71 | $0.71 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum continuous drain current is 5.5A at a case temperature of 25°C.
The Drain-to-Source Breakdown Voltage (BVDSS) is 1000V.
The typical on-state resistance is 2.0 Ohms at VGS = 10V and ID = 3.5A.
The operating junction temperature range is -55°C to 150°C.
The IRFNG50 is supplied in an SMD-1 surface mount package.