| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,646 pcs
|
6646 pcs | On Request | 1 | On Request | On Request | 04+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRFM210BTF is an N-Channel enhancement-mode power MOSFET manufactured by On Semiconductor. It utilizes MOSFET (Metal Oxide) technology and is designed for medium-voltage switching applications.
With a maximum drain-to-source voltage (Vdss) of 200V and a continuous drain current (Id) of 770mA at 25°C case temperature, this MOSFET can handle moderate power levels. The maximum on-resistance (Rds(on)) is 1.5 Ohm at a gate drive of 10V and a drain current of 390mA. The gate threshold voltage (Vgs(th)) is 4V maximum at 250µA drain current. The device features a gate charge of 9.3 nC at 10V and input capacitance of 225 pF at 25V drain-source voltage, enabling efficient switching performance.
The IRFM210BTF is available in a surface-mount package: TO-261-4 (also known as TO-261AA) with a supplier device package of SOT-223-4. It is rated for an operating temperature range of -55°C to 150°C junction temperature and has a maximum power dissipation of 2W at 25°C case temperature. The device is RoHS3 compliant and has a moisture sensitivity level of 1 (unlimited).
| Qty | Low | High |
|---|---|---|
| 699+ | $0.43 | $0.43 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
200V.
770mA at 25°C case temperature.
1.5 Ohm maximum at 390mA drain current and 10V gate drive.
Surface-mount SOT-223-4 (TO-261-4).
-55°C to 150°C junction temperature.
Yes, RoHS3 compliant.
4V maximum at 250µA drain current.