| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
278,154 pcs
|
278154 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
12,000 pcs
|
12000 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
2,139 pcs
|
2139 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
1,357 pcs
|
1357 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
995 pcs
|
995 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
9 pcs
|
9 pcs | On Request | 1 | On Request | On Request | NO DC | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRFM120ATF is an N-Channel enhancement-mode MOSFET manufactured by On Semiconductor. It is designed for medium-voltage switching applications requiring up to 100V drain-source voltage and 2.3A continuous drain current. The device features a maximum on-resistance of 200mOhm at Vgs=10V and Id=1.15A, ensuring efficient power handling.
This MOSFET is housed in a compact SOT-223-4 surface-mount package, suitable for automated assembly and space-constrained designs. The maximum power dissipation is 2.4W at 25°C ambient temperature. The gate threshold voltage is 4V maximum at Id=250µA, and the device can be driven with a 10V gate drive for optimal performance.
Typical applications include load switching, power management circuits, and DC-DC converters. The device is rated for operation over a junction temperature range of -55°C to 150°C, making it suitable for industrial and automotive environments.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.18 | $1.18 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 100V.
The continuous drain current is 2.3A at 25°C ambient temperature.
The maximum on-resistance is 200mOhm at Vgs=10V and Id=1.15A.
The IRFM120ATF is available in a surface-mount SOT-223-4 package (TO-261-4, TO-261AA).
The junction temperature range is -55°C to 150°C.
The maximum gate threshold voltage is 4V at Id=250µA.
The maximum power dissipation is 2.4W at 25°C ambient temperature.