| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
129,143 pcs
|
129143 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
47,500 pcs
|
47500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
10,000 pcs
|
10000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | 2026-02-16 21:33:16 | |
|
8,520 pcs
|
8520 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,407 pcs
|
1407 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
142 pcs
|
142 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRFL9110TRPBF is a P-Channel power MOSFET from Vishay Siliconix, designed for surface-mount applications. It features a maximum drain-to-source voltage of -100V and a continuous drain current of -1.1A at 25°C case temperature. The device offers a maximum on-resistance of 1.2Ω at a gate drive of 10V, enabling efficient switching in moderate-power circuits.
This MOSFET supports a gate-source voltage range of ±20V and has a maximum gate threshold voltage of 4V. It provides fast switching with a maximum gate charge of 8.7nC, making it suitable for high-frequency applications. The device is rated for a maximum power dissipation of 3.1W at 25°C case temperature and 2.0W at 25°C ambient when mounted on a PCB.
The SOT-223 package is designed for surface-mount assembly and offers improved thermal performance through an enlarged tab for heatsinking. The device operates over a junction temperature range of -55°C to 150°C, ensuring reliable performance in demanding environments. It is available in tape and reel packaging for automated assembly.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.32 | $1.32 |
| 10+ | $0.84 | $0.84 |
| 100+ | $0.62 | $0.62 |
| 500+ | $0.49 | $0.49 |
| 1,000+ | $0.42 | $0.42 |
| 2,500+ | $0.37 | $0.37 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is -100V.
The continuous drain current is -1.1A at TC = 25°C.
The maximum on-resistance is 1.2Ω at ID = 660mA and VGS = 10V.
The operating junction temperature range is -55°C to 150°C.
It is available in a surface-mount SOT-223 package.
RoHS compliance is indicated as RoHS3 compliant, but this is unverified.