| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,600 pcs
|
3600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
100 pcs
|
100 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
11 pcs
|
11 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRFL9014PBF is a P-Channel enhancement-mode power MOSFET from Vishay Siliconix, designed for surface-mount applications. It features a drain-source voltage rating of -60V and continuous drain current of -1.8A at 25°C case temperature.
Key electrical characteristics include a maximum on-resistance of 500mΩ at Vgs=-10V and Id=-1.1A, gate charge of 12nC, and input capacitance of 270pF. The device is avalanche rated with single pulse avalanche energy of 140mJ.
The MOSFET is housed in a SOT-223 package (TO-261-4, TO-261AA) suitable for surface mounting. It supports operating junction temperatures from -55°C to 150°C and has a maximum power dissipation of 3.1W at 25°C case temperature.
| Qty | Low | High |
|---|---|---|
| 4,000+ | $0.88 | $0.88 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-60V maximum.
SOT-223 (TO-261-4, TO-261AA) surface-mount package.
-55°C to 150°C junction temperature.
RoHS3 compliant and lead-free (Pb-free).
-1.8A at 25°C case temperature.
500mΩ maximum at Vgs=-10V and Id=-1.1A.
12nC maximum at Vgs=10V.