| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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30 pcs
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30 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRFL4310PBF is an N-Channel power MOSFET manufactured by Infineon Technologies, part of the HEXFET family. It is designed for surface-mount applications and offers a drain-source breakdown voltage of 100V and a continuous drain current of 1.6A (at 25°C with minimum footprint). The device features a maximum drain-source on-resistance of 200mΩ at VGS=10V and ID=1.6A, ensuring efficient power handling.
This MOSFET utilizes advanced process technology to achieve low on-resistance per silicon area, combined with fast switching speed and rugged device design. It supports a gate-source voltage range of ±20V and has a total gate charge of 17nC (typical) at VGS=10V, making it suitable for high-frequency switching applications. The device is capable of handling pulsed drain currents up to 13A and has a single pulse avalanche energy rating of 47mJ.
The IRFL4310PBF is housed in a SOT-223 package (TO-261-4, TO-261AA), which is designed for easy automatic pick-and-place assembly. The package features an enlarged tab for improved thermal performance, allowing power dissipation of up to 1W (minimum footprint) or 2.1W (with 1 inch square copper board). The operating junction temperature range is -55°C to 150°C.
This MOSFET is suitable for a variety of power management and switching applications, including DC-DC converters, load switching, and power supply circuits. Its low on-resistance and fast switching characteristics make it an efficient choice for designs requiring compact, surface-mount power components.
| Qty | Low | High |
|---|---|---|
| 2,500+ | $0.22 | $0.22 |
| 5,000+ | $0.21 | $0.21 |
| 7,500+ | $0.20 | $0.20 |
| 12,500+ | $0.19 | $0.19 |
| 17,500+ | $0.18 | $0.18 |
| 25,000+ | $0.18 | $0.18 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 100V.
The maximum continuous drain current is 2.2A at TA=25°C with VGS=10V on a 1 inch square copper board, and 1.6A with minimum footprint.
The maximum on-resistance is 200mΩ at VGS=10V and ID=1.6A.
The operating junction temperature range is -55°C to 150°C.
The IRFL4310PBF is available in a surface-mount SOT-223 package (TO-261-4, TO-261AA).
The maximum power dissipation is 1W at TA=25°C with minimum footprint, and 2.1W with a 1 inch square copper board.
The gate threshold voltage ranges from 2V to 4V at ID=250µA.