| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,000 pcs
|
4000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Avalanche Energy (Single Pulse, Thermally Limited) | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drain-to-Source Leakage Current (Maximum @ Vds=44 V, Vgs=0 V, Tj=150 °C) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Forward Transconductance (Vds=25V, Id=1.9A) | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Gate to Source Leakage Current (Maximum @ VGS = ±20 V) | |
| Gate-to-Drain Charge (Qgd) (Typical/Maximum @ Vgs=10 V, Vds=44 V, Id=3.7 A) | |
| Gate-to-Source Charge (Qgs) (Typical/Maximum @ Vgs=10 V, Vds=44 V, Id=3.7 A) | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Packaging Type | |
| Peak Diode Recovery dv/dt | |
| Power Dissipation (Max) | |
| Pulsed Drain Current | |
| Rds On (Max) @ Id, Vgs | |
| Standard Package Quantity | |
| Storage Temperature | |
| Supplier Device Package | |
| Technology | |
| Termination Style | |
| Thermal Resistance, Junction-to-Ambient (Typical/Maximum @ PCB Mount, steady state (improved) | |
| Thermal Resistance, Junction-to-Ambient (Typical/Maximum @ PCB Mount, steady state) | |
| Total Gate Charge (Typical/Maximum @ Vgs=10 V, Vds=44 V, Id=3.7 A) | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id | |
| continuous_drain_current (Maximum @ TA = +70 °C, VGS = 10 V) | |
| continuous_drain_current (Maximum @ TA=+25 °C, VGS=-10 V) | |
| continuous_drain_current (Maximum @ Tc = 25 °C, Vgs = -10 V) | |
| drain_to_source_leakage_current (Maximum @ VDS=-55 V, VGS=0 V, TJ=25 °C) | |
| gate_threshold_voltage (Minimum/Maximum @ Id=250 µA) | |
| power_dissipation (Maximum @ Tc=25 °C, PCB mount) |
The IRFL4105 is a 55V N-Channel MOSFET from Infineon Technologies, part of the HEXFET family. It utilizes advanced process technology to achieve ultra-low on-resistance of 45mΩ at Vgs=10V and Id=3.7A. The device is fully avalanche rated with a single pulse avalanche energy of 110mJ and features fast switching with a typical total gate charge of 23nC.
Designed for surface-mount applications, the IRFL4105 is housed in a SOT-223 package with gull wing terminals. It supports continuous drain currents of 3.7A at 25°C ambient and 5.2A at 25°C case temperature. The operating junction temperature range is -55°C to 150°C, with maximum power dissipation of 1.0W (PCB mount at Ta=25°C) and 2.1W (Tc=25°C).
Typical applications include DC-DC converters, load switching, and power management in portable and industrial equipment. The device is supplied in tape and reel packaging with a standard quantity of 2500 pieces. It is lead-free (PbF) and RoHS3 compliant, though RoHS status is unverified.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.88 | $0.88 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source breakdown voltage (Vdss) is 55V minimum at Vgs=0V, Id=250µA.
The IRFL4105 is available in a TO-261-4 / TO-261AA package, with a supplier device package of SOT-223. It is a surface-mount package with gull wing terminals.
The operating junction temperature range is -55°C to 150°C.
The IRFL4105 is listed as RoHS3 Compliant and lead-free (PbF), but this status is unverified and has conflicting sources.
The continuous drain current is 3.7A at Ta=25°C (Vgs=10V) and 5.2A at Tc=25°C (Vgs=10V).
The maximum drain-to-source on-resistance is 45mΩ at Vgs=10V and Id=3.7A.