| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5 pcs
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5 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRFL024ZPBF is an N-Channel enhancement-mode power MOSFET from Infineon Technologies, part of the HEXFET family. It is designed for high-efficiency power management applications requiring low on-resistance and fast switching.
Key electrical specifications include a drain-to-source voltage (Vdss) of 55V, continuous drain current of 5.1A at 25°C (silicon limited), and a maximum on-resistance of 57.5mΩ at VGS=10V. The device can handle pulsed drain currents up to 41A and features a maximum power dissipation of 2.8W (PCB mount, steady state).
The IRFL024ZPBF is offered in a surface-mount SOT-223 package (TO-261-4, TO-261AA), suitable for automated assembly. It is lead-free and rated RoHS3 compliant. The operating junction temperature range is -55°C to +150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.16 | $0.16 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 55V.
The continuous drain current is 5.1A at 25°C (silicon limited) and 4.1A at 70°C, with VGS=10V.
The maximum on-resistance is 57.5mΩ at VGS=10V and ID=3.1A. Typical on-resistance is 46.2mΩ.
The IRFL024ZPBF is offered in a surface-mount SOT-223 package (TO-261-4, TO-261AA).
The operating junction temperature range is -55°C to +150°C.
The IRFL024ZPBF is marked as RoHS3 compliant and is lead-free per the datasheet.
The gate threshold voltage is minimum 2V and maximum 4V at VDS=VGS and ID=250µA.