| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
44,000 pcs
|
44000 pcs | On Request | 1 | On Request | On Request | 98+ | On Request | On Request | |
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Termination Style | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRFL014TR is an N-Channel enhancement-mode power MOSFET from Vishay Siliconix, designed for surface-mount applications. It features a maximum drain-source voltage of 60V and a continuous drain current of 2.7A at 25°C case temperature, with a maximum on-resistance of 200 mOhm at 10V gate drive.
This device is built on third-generation power MOSFET technology, providing fast switching and ruggedized design. The SOT-223 package is optimized for automated pick-and-place assembly and offers improved thermal performance through an enlarged tab, enabling power dissipation up to 3.1W at case temperature or 2W in typical PCB-mount applications.
Key electrical characteristics include a total gate charge of 11 nC and input capacitance of 300 pF, making it suitable for medium-speed switching applications. The device also includes avalanche energy rating of 100 mJ and a peak diode recovery dv/dt of 4.5 V/ns for robust operation in inductive load switching.
| Qty | Low | High |
|---|---|---|
| 2,500+ | $1.55 | $1.55 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vds) is 60V.
The continuous drain current is 2.7A at a case temperature of 25°C.
The device is supplied in a surface-mount SOT-223 package (TO-261-4, TO-261AA).
The operating junction and storage temperature range is -55°C to +150°C.
The maximum on-resistance is 200 mOhm at a gate-source voltage of 10V and drain current of 1.6A.
The maximum gate threshold voltage is 4V at a drain current of 250 µA.