Mfr Part #:

IRFIB7N50LPBF

Mfr Name: Vishay

N-Channel power MOSFET rated at 500V drain-source voltage and 6.8A continuous drain current. Features low on-resistance and fast switching.

✓ Total Stock: 88 pcs

$ Price Range: $1.35

IRFIB7N50LPBF Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Bristol Electronics ✓ Non-Authorised Inventory information	88 pcs On Request	88 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

IRFIB7N50LPBF Description

Short technical summary and product information.

The IRFIB7N50LPBF is a single N-Channel power MOSFET from Vishay Dale designed for high-voltage switching applications. It offers a drain-source breakdown voltage of 500V and a continuous drain current of 6.8A at 25°C case temperature. The typical on-resistance is 0.32Ω at 10V gate drive, with a maximum of 0.38Ω.

This MOSFET incorporates a super fast body diode suitable for zero-voltage switching (ZVS) topologies, reducing the need for external diodes. Gate charge is 92 nC maximum, enabling efficient gate drive. The device is avalanche-rated with a single pulse avalanche energy of 550 mJ.

Housed in a TO-220-3 Full Pack with isolated tab, the device supports through-hole mounting. It is designed for applications such as ZVS switch-mode power supplies, telecom and server power supplies, uninterruptible power supplies, and motor control.

IRFIB7N50LPBF Quick Information

Product Type: Power MOSFET

Series: IRFIB7N50L

Canonical Name: IRFIB7N50LPBF - N-Channel 500V 6.8A Power MOSFET

Subcategory: Single N-Channel

IRFIB7N50LPBF Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 (Unlimited)

REACH Status: REACH Unaffected

Lead Free: Yes

IRFIB7N50LPBF Estimated Pricing

Qty	Low	High
1,000+	$1.35	$1.35

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRFIB7N50LPBF Features

500V drain-source breakdown voltage.
6.8A continuous drain current at 25°C.
Low on-resistance: 0.32Ω typical at 10V.
Super fast body diode for ZVS applications.
RoHS compliant and lead-free.

IRFIB7N50LPBF Applications

Zero voltage switching switch-mode power supplies.
Telecom and server power supply units.
Uninterruptible power supply circuits.
Motor control and industrial drives.

IRFIB7N50LPBF FAQs

7 frequently asked questions generated from this part’s specifications.

What is the drain-source voltage rating of the IRFIB7N50LPBF?

The drain-source breakdown voltage is 500 V minimum at VGS = 0 V, ID = 250 µA.

What is the package type for this MOSFET?

It is available in a TO-220-3 Full Pack with isolated tab (through-hole mounting).

What is the operating temperature range?

The operating junction temperature range is -55°C to +150°C.

Is the IRFIB7N50LPBF RoHS compliant?

Yes, it is RoHS3 compliant as confirmed by the datasheet mark.

What is the continuous drain current at 100°C?

At case temperature 100°C, the continuous drain current is 4.3 A.

What is the gate threshold voltage range?

The gate threshold voltage is 3.0 V minimum and 5.0 V maximum at ID = 250 µA.

What is the maximum gate charge?

The maximum gate charge is 92 nC at VGS = 10 V.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	Vishay
AEC Qualified	No
Current	6.8 A (Tc)
Drain to Source Voltage (Vdss)	500 V @ 250 µA
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	92 nC @ 10 V
Halogen Free	No
Industrial Grade	Yes
Input Capacitance (Ciss) (Max) @ Vds	2220 pF @ 25 V
Lead Style	Through Hole
Military Grade	No
Mounting Type	Through Hole
Operating Temperature	-55°C ~ 150°C (TJ)
Power Dissipation (Max)	46 W (Tc)
Rds On (Max) @ Id, Vgs	0.32 Ω (typ), 0.38 Ω (max) @ 4.1 A, 10 V
Storage Temperature	-55.0°C ~ 150.0°C
Supplier Device Package	TO-220-3
Tape & Reel	No
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±30 V
Vgs(th) (Max) @ Id	3.0 V (min), 5.0 V (max) @ 250 µA