| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
4 pcs
|
4 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRFIB7N50A is an N-Channel enhancement-mode MOSFET designed by Vishay Dale for high-voltage switching applications. It offers a drain-source voltage (Vdss) of 500V and a continuous drain current of 6.6A at 25°C case temperature, with a maximum on-resistance of 520mOhm at 10V gate drive. The device is characterized by a low gate charge of 52nC, enabling efficient gate drive requirements.
This MOSFET is suitable for switch-mode power supplies (SMPS), uninterruptible power supplies, and high-speed power switching circuits. It includes robust avalanche and dynamic dV/dt capabilities, with a single pulse avalanche energy rating of 275mJ. The device is fully characterized for capacitance and avalanche voltage and current.
The IRFIB7N50A is packaged in a TO-220-3 Full Pack with an isolated tab, providing high voltage isolation of 2.5kV. It supports through-hole mounting and operates over a junction temperature range of -55°C to 150°C. The part is RoHS3 compliant and REACH unaffected.
| Qty | Low | High |
|---|---|---|
| 1,000+ | $4.45 | $4.45 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 500V.
The continuous drain current is 6.6A at Tc=25°C and 4.2A at Tc=100°C.
The maximum drain-source on-resistance is 520mOhm at Id=4A and Vgs=10V.
The IRFIB7N50A is available in a TO-220-3 Full Pack, Isolated Tab package.
The operating junction temperature range is -55°C to 150°C.
The IRFIB7N50A is listed as RoHS3 compliant, but this status is unverified.