| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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300 pcs
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300 pcs | On Request | 1 | On Request | On Request | 18+17+ | On Request | On Request |
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| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRFIB5N50LPBF is a single N-Channel Power MOSFET manufactured by Vishay, housed in a TO-220 FULLPAK isolated-tab package. It is designed for high-voltage switching applications and offers a drain-source breakdown voltage of 500V and continuous drain current of 4.7A at 25°C. The device features a typical on-resistance of 0.67Ω at VGS=10V and a gate charge of 45 nC.
This MOSFET incorporates a super fast body diode, which simplifies design in zero-voltage switching (ZVS) topologies. It is suitable for use in telecom and server power supplies, uninterruptible power supplies, and motor control applications. The device is rated for an operating junction temperature range of -55°C to +150°C and is capable of handling pulsed drain currents up to 16A. It is lead-free and RoHS3 compliant.
| Qty | Low | High |
|---|---|---|
| 1,000+ | $1.24 | $1.24 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The IRFIB5N50LPBF has a maximum drain-source voltage (VDS) of 500V.
The maximum continuous drain current is 4.7A at TC=25°C and 3.0A at TC=100°C.
It is available in a TO-220-3 Full Pack with an isolated tab (TO-220 FULLPAK).
The operating junction temperature range is -55°C to +150°C.
Yes, it is RoHS3 compliant and lead-free.
The typical on-resistance is 0.67Ω at VGS=10V and ID=2.4A, with a maximum of 0.80Ω.