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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,333 pcs
|
2333 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
190 pcs
|
190 pcs | On Request | 1 | On Request | On Request | 12+ | On Request | On Request | |
|
41 pcs
|
41 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Avalanche Energy (Maximum @ Repetitive) | |
| Avalanche Energy (Maximum @ Single pulse) | |
| Creepage Distance | |
| Current | |
| Drain Current (Maximum @ Tc=100 °C) | |
| Drain Current (Maximum @ pulsed) | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Gate Charge (Qgd) | |
| Gate Charge (Qgs) | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Isolation Voltage | |
| Lead Style | |
| Mounting Torque | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Soldering Temperature | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Thermal Resistance Junction-to-Ambient | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRFI9Z34GPBF is a P-Channel enhancement-mode Power MOSFET from Vishay Dale. It is designed for high-efficiency switching applications and features a maximum drain-source voltage of -60V and a continuous drain current of -12A at 25°C case temperature. The on-resistance is typically 140mΩ at Vgs=-10V, ensuring low conduction losses. The gate charge is 34nC, enabling fast switching transitions, and the input capacitance is 1100pF at Vds=25V.
The device is housed in an isolated TO-220 Full Pack package, which provides 2.5kV RMS isolation between the tab and leads, eliminating the need for additional insulating hardware. The package supports through-hole mounting and has a creepage distance of 4.8mm. The operating junction temperature range is -55°C to 175°C, and the maximum power dissipation is 42W at 25°C case temperature. The MOSFET also features single pulse avalanche energy rating of 370mJ and repetitive avalanche energy of 4.2mJ, providing ruggedness in inductive switching environments.
This P-Channel MOSFET is suitable for high-side load switching, DC-DC converters, and power management circuits where a positive supply rail needs to be switched. The isolated package simplifies heatsinking and improves thermal performance in commercial and industrial applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $4.03 | $4.03 |
| 10+ | $1.98 | $1.98 |
| 100+ | $1.61 | $1.61 |
| 500+ | $1.45 | $1.45 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 60V.
It comes in a TO-220-3 Full Pack with isolated tab, through-hole mounting.
The operating junction temperature range is -55°C to 175°C.
The part is listed as RoHS3 Compliant and lead-free per the datasheet.
The maximum on-resistance is 140mΩ at Vgs=-10V and Id=7.2A.
The maximum gate charge is 34nC at Vgs=10V.
The isolation voltage is 2.5kV RMS at 60Hz for 60 seconds.