| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,254 pcs
|
2254 pcs | On Request | 1 | On Request | On Request | 07+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRFI9620GPBF is a P-Channel power MOSFET designed for high-voltage switching applications. Key electrical specifications include a drain-to-source voltage (Vdss) of 200V and a continuous drain current of 3A (Tc). The device requires a 10V gate drive to achieve maximum on-resistance, with typical Rds(on) of 1.5Ohm at 1.8A, 10V.
This through-hole packaged MOSFET uses a TO-220-3 Full Pack with isolated tab, providing enhanced thermal management. Maximum power dissipation is rated at 30W (Tc). The device operates over a junction temperature range of -55°C to +150°C.
Designed for general-purpose power switching and control circuits, the IRFI9620GPBF integrates a P-Channel MOSFET in a compact, industry-standard package suitable for a variety of power management applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.42 | $3.42 |
| 10+ | $1.72 | $1.72 |
| 100+ | $1.55 | $1.55 |
| 500+ | $1.26 | $1.26 |
| 1,000+ | $1.16 | $1.16 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 200V.
The maximum continuous drain current (Id) is 3A at case temperature (Tc).
The IRFI9620GPBF is supplied in a TO-220-3 Full Pack with isolated tab, for through-hole mounting.
The operating junction temperature range is -55°C to +150°C.
The part is marked as RoHS compliant (RoHS3) per low-confidence data. This compliance status has not been independently verified.
The typical on-resistance (Rds on) is 1.5 Ohms when driven with 10V gate-source voltage and 1.8A drain current.
The maximum power dissipation is 30W at case temperature (Tc).