| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
487 pcs
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487 pcs | On Request | 1 | On Request | On Request | 99 | On Request | On Request |
| Category | |
| Manufacturer Name |
The IRFI9620G is a high-performance Power MOSFET from Infineon Technologies, designed for demanding applications. It features a maximum drain-source breakdown voltage (Vds) of -200V and a typical on-resistance (Rds(on)) of 1.5 ohms. The device can handle a continuous drain current (Id) of up to -3A.
This MOSFET is suitable for a wide range of power switching and amplification circuits. Its robust design and specifications make it a reliable choice for engineers developing power supplies, motor control systems, and other electronic modules requiring efficient power management.
Further details regarding specific operating conditions, package type, and thermal characteristics would typically be found in the manufacturer's datasheet. However, the core electrical parameters provided indicate its capability for handling significant voltage and current loads.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.67 | $1.67 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source breakdown voltage (Vds) for the IRFI9620G is -200V.
The typical on-resistance (Rds(on)) for the IRFI9620G is 1.5 ohms.
The continuous drain current (Id) for the IRFI9620G is -3A.
The IRFI9620G is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the IRFI9620G is Level 1.
The IRFI9620G is REACH Unaffected.