| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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30 pcs
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30 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRFI9530G is a third-generation P-Channel power MOSFET from Vishay, designed for fast switching and low on-resistance. It features a -100V drain-source voltage rating and a continuous drain current of -7.7A at 25°C. The on-resistance is typically 300mOhm at Vgs = -10V, ensuring efficient power handling.
This MOSFET is housed in a TO-220-3 Full Pack with an isolated tab, providing 2.5kV RMS isolation between the tab and heatsink, eliminating the need for additional insulating hardware. The package offers a low thermal resistance of 3.6°C/W junction-to-case, supporting up to 42W power dissipation. The device operates over a junction temperature range of -55°C to 175°C.
With a gate charge of 38nC and input capacitance of 860pF, the IRFI9530G is suitable for high-frequency switching applications. It includes dynamic dV/dt rating and avalanche energy capability for ruggedized designs. The lead-free ordering option is IRFI9530GPbF.
-100V maximum.
TO-220-3 Full Pack with isolated tab.
-55°C to 175°C.
RoHS3 compliant (unverified).
300mOhm at Vgs=-10V, Id=-4.6A.
-7.7A at Tc=25°C, -5.4A at Tc=100°C.
38nC maximum at Vgs=-10V.