IRFI840G N-Channel power MOSFET with 500V drain-source breakdown voltage and 4.6A continuous drain current. Features a TO-220 FULLPAK isolated package with 2.5kV RMS isolation.
Mfr Part #:

IRFI840G

Available from 1 distributors
Mfr Name: Vishay
Vishay
N-Channel power MOSFET with 500V drain-source breakdown voltage and 4.6A continuous drain current. Features a TO-220 FULLPAK isolated package with 2.5kV RMS isolation.
✓ Total Stock: 65 pcs
$ Price Range: $1.26

IRFI840G Available from 1 distributor

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✓ Non-Authorised
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IRFI840G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IRFI840G Description

Short technical summary and product information.

The IRFI840G is an N-Channel power MOSFET from Vishay Siliconix, designed for high-voltage switching applications. It features a drain-source voltage (Vdss) of 500V and a continuous drain current of 4.6A at 25°C, with a maximum on-resistance of 850mOhm at Vgs = 10V. The device is housed in a TO-220 FULLPAK package, which provides high voltage isolation of 2.5kV RMS and eliminates the need for additional insulating hardware.

 

Key electrical characteristics include a total gate charge of 67nC, input capacitance of 1300pF, and a maximum power dissipation of 40W at 25°C case temperature. The MOSFET is rated for a junction temperature range of -55°C to 150°C and supports a pulsed drain current of up to 18A. It also features a single pulse avalanche energy rating of 370mJ, making it suitable for rugged industrial environments.

 

The TO-220 FULLPAK package offers a sink-to-lead creepage distance of 4.8mm and low thermal resistance, with a maximum junction-to-case thermal resistance of 3.1°C/W. The device is mounted using through-hole technology and is suitable for commercial-industrial applications where isolation and reliability are critical.

IRFI840G Quick Information

Product Type: Power MOSFET
Canonical Name: IRFI840G N-Channel Power MOSFET
Subcategory: Single MOSFET

IRFI840G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1
REACH Status: Compliant

IRFI840G Estimated Pricing

Qty Low High
3+ $1.26 $1.26

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRFI840G Features

  • N-Channel power MOSFET with 500V drain-source voltage.
  • Continuous drain current rated at 4.6A at 25°C.
  • Low on-resistance of 850mOhm at Vgs = 10V.
  • TO-220 FULLPAK isolated package with 2.5kV RMS isolation.
  • Rugged design with 370mJ single pulse avalanche energy rating.

IRFI840G Applications

  • Suitable for high-voltage switching power supplies.
  • Used in commercial-industrial power conversion circuits.
  • Ideal for isolated DC-DC converter designs.
  • Applicable in motor control and inverter systems.

IRFI840G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the IRFI840G?

The maximum drain-source voltage (Vdss) is 500V.

What is the continuous drain current rating of the IRFI840G?

The continuous drain current is 4.6A at Tc = 25°C and 2.9A at Tc = 100°C.

What is the on-resistance of the IRFI840G?

The maximum on-resistance is 850mOhm at Id = 2.8A and Vgs = 10V.

What is the operating temperature range of the IRFI840G?

The operating junction temperature range is -55°C to 150°C.

What package type is the IRFI840G available in?

The IRFI840G is available in a TO-220 FULLPAK through-hole package.

What is the gate charge of the IRFI840G?

The maximum total gate charge (Qg) is 67nC at Vgs = 10V.

What is the maximum power dissipation of the IRFI840G?

The maximum power dissipation is 40W at Tc = 25°C.

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