| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request |
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The IRFI720G is a third-generation N-Channel power MOSFET from Vishay Siliconix, designed for fast switching and rugged performance in commercial and industrial applications. It offers a maximum drain-source voltage of 400V and a continuous drain current of 2.6A at 25°C, with a pulsed drain current capability of 10A.
The device features a low on-resistance of 1.8Ω at Vgs=10V, ensuring efficient power handling. The TO-220 FullPAK package provides high voltage isolation of 2.5kV RMS, eliminating the need for additional insulating hardware. The package also offers a sink-to-lead creepage distance of 4.8mm and low thermal resistance.
Key electrical characteristics include a maximum gate charge of 20nC, gate-source charge of 3.3nC, and gate-drain charge of 11nC. The device is rated for a maximum power dissipation of 30W at 25°C case temperature and can operate over a junction temperature range of -55°C to +150°C. It also features a dynamic dV/dt rating of 4.0V/ns and a single pulse avalanche energy rating of 150mJ.
The IRFI720G is suitable for through-hole mounting and is commonly used in power supply circuits, motor control, and other switching applications where isolation and reliability are required.
The maximum drain-source voltage (Vds) is 400V.
The continuous drain current is 2.6A at 25°C case temperature and 1.7A at 100°C.
The maximum on-resistance (Rds(on)) is 1.8Ω at Vgs=10V and Id=1.6A.
The IRFI720G is available in a TO-220 FullPAK (TO-220-3) isolated through-hole package.
The operating junction and storage temperature range is -55°C to +150°C.
The IRFI720G is listed as RoHS3 compliant, but this status is unverified and should be confirmed with the manufacturer.
The TO-220 FullPAK package provides a minimum isolation voltage of 2.5kV RMS (t=60s, f=60Hz).