IRFI640G

The IRFI640G is a third-generation N-Channel power MOSFET from Vishay Dale designed for fast switching and rugged performance. It features a drain-source voltage (Vdss) of 200V and a continuous drain current rating of 9.8A at 25°C (6.2A at 100°C). The maximum on-resistance is 180mOhm at Vgs=10V and Id=5.9A, enabling efficient power conduction. Key switching characteristics include a total gate charge of 70nC and input capacitance of 1300pF, supporting moderate-frequency applications. The device is housed in a TO-220-3 Full Pack (also known as TO-220 FULLPAK) isolated tab package, providing high voltage isolation of 2.5kV RMS between the tab and heatsink. The package eliminates the need for additional insulating hardware in commercial and industrial systems. The MOSFET is mounted through-hole and operates over a junction temperature range of -55°C to 150°C. The part's maximum power dissipation is 40W at case temperature 25°C. It also features a single pulse avalanche energy rating of 430mJ, enhancing robustness in inductive switching environments. This component is suitable for power supply, motor control, and general switching applications where isolation and thermal management are important.