| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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507 pcs
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507 pcs | On Request | 1 | On Request | On Request | 99 | On Request | On Request |
| Category | |
| Manufacturer Name |
The IRFI624G from Infineon Technologies is a third-generation N-Channel Power MOSFET. It is designed to offer a combination of fast switching speeds, rugged device design, low on-resistance, and cost-effectiveness.
Key electrical specifications include a drain-source breakdown voltage (Vds) of 250V and a typical on-resistance (Rds(on)) of 1.1Ω at a gate-source voltage (Vgs) of 10V. The device has a continuous drain current (Id) of 3.4A at 25°C case temperature and 2.2A at 100°C case temperature.
This MOSFET is housed in a TO-220 FULLPAK isolated package, which eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound provides high isolation capability and a low thermal resistance between the tab and an external heatsink. The FULLPAK package can be mounted using a single clip or a single screw fixing.
Additional features include a maximum power dissipation of 30W at 25°C, a junction-to-case thermal resistance of 1.4°C/W, and an operating junction temperature range of -55°C to +150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.67 | $1.67 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 250V.
The typical on-resistance is 1.1 Ohms.
The maximum continuous drain current is 3.4A.
The package type is TO-220 FULLPAK.
The operating junction and storage temperature range is -55°C to +150°C.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.