| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,025 pcs
|
1025 pcs | On Request | 1 | On Request | On Request | 11+ | On Request | On Request | |
|
18 pcs
|
18 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRFI620G is an N-Channel power MOSFET from Vishay Siliconix, designed for a drain-source voltage of 200V and a continuous drain current of 4.1A at 25°C case temperature. It features a maximum on-resistance of 800mOhm at 10V gate-source voltage.
The part is housed in a TO-220-3 Full Pack with an isolated tab, simplifying mounting by eliminating the need for additional insulating hardware. The junction temperature range is -55°C to 150°C, and the maximum power dissipation is 30W at 25°C case temperature.
This device incorporates third-generation power MOSFET technology providing fast switching and rugged device design. The total gate charge is 14nC, making it suitable for a range of power switching applications.
| Qty | Low | High |
|---|---|---|
| 1,000+ | $1.84 | $1.84 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
200V.
4.1A.
TO-220-3 Full Pack, Isolated Tab (through-hole mounting).
-55°C to 150°C (junction temperature).
RoHS3 Compliant (unverified, treat as low confidence).