| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,292 pcs
|
2292 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
137 pcs
|
137 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
79 pcs
|
79 pcs | On Request | 1 | On Request | On Request | 01+ | On Request | On Request |
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| Manufacturer Name |
The IRFI540N from Vishay Dale is an N-Channel HEXFET Power MOSFET designed for efficient power applications. It features a high breakdown voltage of 100V and a continuous drain current rating of 20A at 25°C.
This MOSFET offers a low on-resistance of 0.052 Ohms at 11A and 10V gate-source voltage, contributing to reduced power loss. The device is rated for a maximum power dissipation of 54W at 25°C.
Packaged in a TO-220 FULLPAK, the IRFI540N provides advanced process technology and an isolated package. This design simplifies integration by eliminating the need for additional insulating hardware in commercial-industrial applications. The moulding compound offers high isolation capability and low thermal resistance between the tab and an external heatsink.
Key electrical parameters include a gate threshold voltage between 2.0V and 4.0V, and a gate-to-source voltage range of ±20V. The operating junction and storage temperature range is from -55°C to +175°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
100V (minimum).
TO-220 FULLPAK (TO-220-3).
-55°C to 175°C (junction and storage).
20A at TC=25°C, 14A at TC=100°C.
0.052Ω maximum at VGS=10V.
2V typical, 4V maximum.
54W at TC=25°C (datasheet).