| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,600 pcs
|
1600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRFI540G is a third-generation N-Channel Power MOSFET designed and manufactured by Vishay Siliconix (listed under Vishay Dale). It offers a drain-source voltage rating of 100V and a continuous drain current of 17A at 25°C (12A at 100°C). The device features a maximum on-resistance of 77mΩ at Vgs=10V, ensuring efficient switching. With a gate charge of 72nC and input capacitance of 1700pF, it is suitable for high-speed switching applications. The MOSFET is capable of handling pulsed drain currents up to 68A and has a single pulse avalanche energy rating of 720mJ. It operates over a junction temperature range of -55°C to 175°C. The TO-220-3 Full Pack package provides high voltage isolation (2.5kV) and eliminates the need for additional insulating hardware, simplifying heatsink mounting. The device is through-hole mountable and is commonly used in power supplies, motor controls, and other industrial applications.
100V.
TO-220-3 Full Pack, Isolated Tab.
-55°C to 175°C.
RoHS3 Compliant (unverified).
17A at Tc=25°C, 12A at Tc=100°C.
77mΩ maximum at Vgs=10V, Id=10A.
72nC maximum at Vgs=10V.