| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,982 pcs
|
3982 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Lead Spacing | |
| Lead Style | |
| Mounting Type |
The Infineon IRFI530NPBF is a Fifth Generation HEXFET Power MOSFET designed for efficiency and reliability. It offers a 100V drain-to-source breakdown voltage and a continuous drain current of 12A at 25°C.
Key electrical characteristics include a low static drain-to-source on-resistance of 0.11 Ohms at 6.6A and 10V gate-source voltage, and a gate threshold voltage maximum of 4V. The device is fully avalanche rated and features advanced processing techniques for low on-resistance per silicon area.
Packaged in a TO-220 Full Pak, this MOSFET eliminates the need for additional insulating hardware in commercial-industrial applications. The molding compound provides high isolation capability and low thermal resistance. It is suitable for a wide variety of applications requiring efficient and reliable power switching.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source breakdown voltage is 100V minimum.
The continuous drain current is 12A at 25°C case temperature.
The maximum on-resistance (RDS(on)) is 0.11Ω at VGS=10V, ID=6.6A.
The operating junction temperature range is -55°C to +175°C.
The device is available in a TO-220-3 Full Pack through-hole package.
The maximum gate charge (Qg) is 44nC at VGS=10V.
The maximum gate threshold voltage (VGS(th)) is 4V at ID=250µA.