| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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28 pcs
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28 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name |
The IRFI530G is a HEXFET Power MOSFET manufactured by International Rectifier. This component is designed for power applications and features a breakdown voltage of 100V.
Key electrical characteristics include a maximum RDS(on) of 160mΩ and an input capacitance of 670pF. The MOSFET has a rise time of 28ns and a fall time of 25ns.
With a maximum power dissipation of 42W, the IRFI530G operates within a temperature range of -55°C to 175°C. It is housed in a TO-220-3 package and is designed for through-hole mounting.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The breakdown voltage of the IRFI530G is 100V.
The maximum RDS(on) for the IRFI530G is 160mΩ.
The IRFI530G operates between -55°C and 175°C.
The IRFI530G is in a TO-220-3 package.