| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,020 pcs
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3020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRFI4410ZPBF is an N-Channel enhancement mode power MOSFET from Infineon's HEXFET family. It is rated for a drain-to-source voltage of 100V and a continuous drain current of 43A at 25°C. The device offers a typical on-resistance of 7.9mΩ and a maximum of 9.3mΩ at Vgs=10V, making it suitable for high-efficiency switching applications.
This MOSFET is designed for high-speed power switching and is characterized for improved gate, avalanche, and dynamic dV/dt ruggedness. It features a fully characterized capacitance and avalanche SOA, with a maximum single pulse avalanche energy of 310mJ. The device is housed in a TO-220AB Full-Pak package with through-hole mounting, providing excellent thermal performance with a junction-to-case thermal resistance of 3.2°C/W.
The IRFI4410ZPBF is lead-free and RoHS3 compliant. It is well-suited for applications such as high efficiency synchronous rectification in SMPS, uninterruptible power supplies, high speed power switching, and hard switched and high frequency circuits.
The drain-to-source breakdown voltage is 100V minimum.
The maximum continuous drain current is 43A at Tc=25°C with Vgs=10V.
The typical on-resistance is 7.9mΩ and the maximum is 9.3mΩ at Vgs=10V and Id=26A.
It comes in a TO-220-3 Full Pack (TO-220AB Full-Pak) through-hole package.
The operating junction temperature range is -55°C to 175°C.
The part is marked as RoHS3 compliant and is lead-free per the datasheet.
The maximum power dissipation is 47W at Tc=25°C.